Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus

ABSTRACT

According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer. The base material includes a first surface, a second surface at a side opposite to the first surface, and at least one hole extending through the first and second surfaces. The ceramic layer is a ceramic layer located on the base material. The at least one hole includes a first hole part continuous with the first surface. The ceramic layer includes a first part and a second part. The first part is located on the first surface. The first part is exposed. The second part is located on the first hole part. An arithmetical mean height Sa of a surface of the first part is less than an arithmetical mean height Sa of a surface of the second part.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2021-072039, filed on Apr. 21, 2021, andNo. 2022-011203, filed on Jan. 27, 2022; the entire contents of whichare incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductormanufacturing apparatus member and a semiconductor manufacturingapparatus.

BACKGROUND

A semiconductor manufacturing apparatus is used in a manufacturingprocess of a semiconductor device to perform plasma processing of apatterning object such as a semiconductor wafer, etc. There are caseswhere a semiconductor manufacturing apparatus member that contacts theplasma and includes at least one hole is located inside such asemiconductor manufacturing apparatus. There are cases where particlesare produced from such a semiconductor manufacturing apparatus member.It is desirable to reduce the production or effects of the particlesbecause the particles reduce the yield of the semiconductor device to bemanufactured.

SUMMARY

According to the embodiment, a semiconductor manufacturing apparatusmember is used inside a chamber of a semiconductor manufacturingapparatus. The member includes a base material and a ceramic layer. Thebase material includes a first surface, a second surface at a sideopposite to the first surface, and at least one hole extending throughthe first and second surfaces. The ceramic layer is a ceramic layerlocated on the base material. The at least one hole includes a firsthole part continuous with the first surface. The ceramic layer includesa first part and a second part. The first part is located on the firstsurface. The first part is exposed. The second part is located on thefirst hole part. An arithmetical mean height Sa of a surface of thefirst part is less than an arithmetical mean height Sa of a surface ofthe second part.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a semiconductormanufacturing apparatus that includes a semiconductor manufacturingapparatus member according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating a portion of thesemiconductor manufacturing apparatus member according to the firstembodiment.

FIGS. 3A to 3C are cross-sectional views illustrating portions of othersemiconductor manufacturing apparatus members according to the firstembodiment.

FIGS. 4A to 4C are cross-sectional views illustrating portions of basematerials according to the first embodiment.

FIGS. 5A and 5B are cross-sectional views illustrating portions ofsemiconductor manufacturing apparatus members according to a secondembodiment.

FIGS. 6A and 6B are cross-sectional views illustrating portions ofsemiconductor manufacturing apparatus members.

FIG. 7 is a graph illustrating stress of the semiconductor manufacturingapparatus member.

FIG. 8 is a table illustrating an evaluation of the particle resistanceof the semiconductor manufacturing apparatus member.

DETAILED DESCRIPTION

A first invention is a semiconductor manufacturing apparatus member usedinside a chamber of a semiconductor manufacturing apparatus, and thesemiconductor manufacturing apparatus member includes a base materialand a ceramic layer; the base material includes a first surface, asecond surface at a side opposite to the first surface, and at least onehole extending through the first and second surfaces; the ceramic layeris located on the base material; the at least one hole includes a firsthole part continuous with the first surface; the ceramic layer includesa first part that is located on the first surface and is exposed, and asecond part located on the first hole part; and an arithmetical meanheight Sa of a surface of the first part is less than an arithmeticalmean height Sa of a surface of the second part.

According to the semiconductor manufacturing apparatus member, theceramic layer is located at the first surface and the first hole part ofthe base material, and the arithmetical mean height Sa of the surface ofthe first part on the first surface is less than the arithmetical meanheight Sa of the surface of the second part on the first hole part. Theproduction or effects of the particles can be reduced thereby.

For example, the production of particles from the first part can beeffectively suppressed by setting the surface of the first part thatcontacts the corrosive plasma to be a smooth surface having a relativelysmall arithmetical mean height Sa.

Also, the production or effects of the particles from the hole can besuppressed by setting the arithmetical mean height Sa of the surface ofthe second part on the first hole part to be relatively large. Forexample, when the first part located on the first surface is exposed tothe plasma, an electric field concentrates at the second part on thefirst hole part more easily than at the first part because the secondpart is located at the edge vicinity of the hole that is continuous withthe first surface. Conversely, by setting the arithmetical mean heightSa of the surface of the second part to be relatively large, forexample, the surface area of the second part is increased, and theconcentration of the electric field can be relaxed. Also, by setting thearithmetical mean height Sa of the surface of the second part located atthe edge vicinity (the outlet vicinity) of the hole to be relativelylarge, for example, the particles that are produced from the hole can becaught by the second part, and the effects of the particles can be moreeffectively suppressed.

A second invention is the semiconductor manufacturing apparatus memberof the first invention, wherein the at least one hole further includes asecond hole part and a third hole part; the second hole part ispositioned between the second surface and the first hole part in a firstdirection; the first direction is from the first surface toward thesecond surface; the third hole part is positioned between the first holepart and the second hole part in the first direction, is continuous withthe first hole part, and is exposed; and an arithmetical mean height Saof the third hole part is greater than the arithmetical mean height Saof the surface of the first part and greater than the arithmetical meanheight Sa of the surface of the second part.

According to the semiconductor manufacturing apparatus member, the firstpart of the ceramic layer is located on the first hole part; and thethird hole part that is continuous with the first hole part contacts theplasma. In other words, the ceramic layer is not located on the thirdhole part; and the inner wall of the hole is exposed at the third holepart. In other words, the third hole part of the hole is a base materialend part that contacts the plasma. By setting the arithmetical meanheight Sa of such a base material end part (the third hole part) to berelatively large, the surface area of the base material end part can beincreased, and the concentration of the electric field at the basematerial end part can be suppressed. For example, the production ofparticles from the base material end part can be suppressed thereby.

A third invention is the semiconductor manufacturing apparatus member ofthe first or second invention, wherein the arithmetical mean height Saof the surface of the second part is not more than 10 times thearithmetical mean height Sa of the surface of the first part.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A fourth invention is the semiconductor manufacturing apparatus memberof the second invention, wherein the arithmetical mean height Sa of thethird hole part is greater than 2 times the arithmetical mean height Saof the surface of the first part.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A fifth invention is the semiconductor manufacturing apparatus member ofany one of the first to fourth inventions, wherein the arithmetical meanheight Sa of the surface of the second part is less than 0.5micrometers.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A sixth invention is the semiconductor manufacturing apparatus member ofany one of the first to fifth inventions, wherein the arithmetical meanheight Sa of the surface of the first part is less than 0.1 micrometers.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A seventh invention is the semiconductor manufacturing apparatus memberof the first invention, wherein the at least one hole further includes asecond hole part and a third hole part; the second hole part ispositioned between the second surface and the first hole part in a firstdirection; the first direction is from the first surface toward thesecond surface; the third hole part is positioned between the first holepart and the second hole part in the first direction, is continuous withthe first hole part, and is exposed; and an arithmetical mean height Saof the third hole part is greater than the arithmetical mean height Saof the surface of the first part and less than the arithmetical meanheight Sa of the surface of the second part.

The plasma and the base material directly contact at the third holepart. Therefore, compared to the ceramic layer, there are cases whereparticles are easily produced from the base material at the third holepart. Conversely, according to the semiconductor manufacturing apparatusmember, compared to the first and second hole parts, the third hole partis positioned distant to the first and second surfaces of the basematerial. Furthermore, the arithmetical mean height Sa of the third holepart is less than the arithmetical mean height Sa of the surface of thesecond part. The production of particles from the third hole part can bereduced thereby.

An eighth invention is the semiconductor manufacturing apparatus memberof any one of the first to seventh inventions, wherein the ceramic layerincludes a polycrystalline ceramic.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A ninth invention is the semiconductor manufacturing apparatus member ofthe eighth invention, wherein an average crystallite size of thepolycrystalline ceramic calculated using a TEM image having amagnification of 400,000 times to 2,000,000 times is not less than 3nanometers and not more than 50 nanometers.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A tenth invention is the semiconductor manufacturing apparatus member ofany one of the first to ninth inventions, wherein the ceramic layerincludes at least one selected from the group consisting of an oxide ofa rare-earth element, a fluoride of a rare-earth element, and an acidfluoride of a rare-earth element.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

An eleventh invention is the semiconductor manufacturing apparatusmember of the tenth invention, wherein the rare-earth element is atleast one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu,La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A twelfth invention is the semiconductor manufacturing apparatus memberof any one of the first to eleventh inventions, wherein the basematerial includes a ceramic.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A thirteenth invention is the semiconductor manufacturing apparatusmember of the twelfth invention, wherein the base material includesalumina.

According to the semiconductor manufacturing apparatus member, theproduction or effects of the particles can be more reliably reduced.

A fourteenth invention is a semiconductor manufacturing apparatus thatincludes a chamber and the semiconductor manufacturing apparatus memberaccording to any one of the first to thirteenth inventions, wherein thechamber includes an interior wall that defines a space in which plasmais generated, and the ceramic layer of the semiconductor manufacturingapparatus member is included in at least a portion of the interior wall.

According to the semiconductor manufacturing apparatus, the productionor effects of the particles can be reduced.

According to aspects of the invention, a semiconductor manufacturingapparatus member and a semiconductor manufacturing apparatus areprovided in which the production or effects of the particles can bereduced.

Exemplary embodiments will now be described with reference to thedrawings. Similar components in the drawings are marked with likereference numerals; and a detailed description is omitted asappropriate.

The drawings are schematic or conceptual; and the relationships betweenthe thickness and width of portions, the proportional coefficients ofsizes among portions, etc., are not necessarily the same as the actualvalues thereof. Furthermore, the dimensions and proportionalcoefficients may be illustrated differently among drawings, even foridentical portions.

First Embodiment

FIG. 1 is a cross-sectional view illustrating a semiconductormanufacturing apparatus that includes a semiconductor manufacturingapparatus member according to a first embodiment.

The semiconductor manufacturing apparatus 100 illustrated in FIG. 1includes a chamber 110, a semiconductor manufacturing apparatus member120, and an electrostatic chuck 160. The electrostatic chuck 160 islocated in the lower part inside the chamber 110. An object to be heldsuch as a wafer 210 or the like is placed on the electrostatic chuck160. In the example, the semiconductor manufacturing apparatus member120 is located in the upper part inside the chamber 110. For example,the semiconductor manufacturing apparatus member 120 is a top platemember of the chamber 110 positioned directly above the electrostaticchuck 160 and the wafer 210 inside the chamber 110.

The chamber 110 includes an interior wall 111 that forms a space (aregion 191) in which the plasma is generated. A ceramic layer 20 at thesurface of the semiconductor manufacturing apparatus member 120 (seeFIG. 2) is included in at least a portion of the interior wall 111. Inthe example, the interior wall 111 includes a lower interior wall 111 bat which the electrostatic chuck 160 is located, and an upper interiorwall 111 u located higher than the lower interior wall 111 b. Theceramic layer 20 of the semiconductor manufacturing apparatus member 120is located on at least a portion of the upper interior wall 111 u.

In the semiconductor manufacturing apparatus 100, high frequency poweris supplied; and, for example, a raw material gas such as ahalogen-based gas or the like is introduced to the interior of thechamber 110 as in arrow A1 illustrated in FIG. 1. Then, the raw materialgas that is introduced to the interior of the chamber 110 is plasmatizedin the region 191 between the electrostatic chuck 160 and thesemiconductor manufacturing apparatus member 120.

Here, there are cases where particles 221 are produced when the interiorwall of the chamber 110 is corroded by the plasma. If the particles 221adhere to the wafer 210, there are cases where a discrepancy occurs inthe manufactured semiconductor device. Then, there are cases where theyield of the semiconductor device and the productivity degrade.Therefore, plasma resistance of the semiconductor manufacturingapparatus member 120 is necessary.

The semiconductor manufacturing apparatus member according to theembodiment may be a member located at a position other than the upperpart inside the chamber. The semiconductor manufacturing apparatus inwhich the semiconductor manufacturing apparatus member is used is notlimited to the example of FIG. 1 and includes any semiconductormanufacturing apparatus (semiconductor processing apparatus) performingprocessing such as annealing, etching, sputtering, CVD (Chemical VaporDeposition), etc.

The semiconductor manufacturing apparatus member according to theembodiment can be favorably used as various members in a semiconductormanufacturing apparatus, and especially as members used in anenvironment exposed to a corrosive high density plasma atmosphere.Specifically, a chamber wall, a shower plate, a liner, a shield, awindow, an edge ring, a focus ring, etc., are examples.

FIG. 2 is a cross-sectional view illustrating a portion of thesemiconductor manufacturing apparatus member according to the firstembodiment.

FIG. 2 shows an enlargement of a region R vicinity illustrated in FIG.1.

The semiconductor manufacturing apparatus member 120 includes a basematerial 10 and the ceramic layer 20. The base material 10 includes afirst surface 11, and a second surface 12 at the side opposite to thefirst surface 11. The first surface 11 faces the interior of the chamber110 shown in FIG. 1, and the second surface 12 faces out of the chamber110. At least one hole 13 is provided in the base material 10. The hole13 extends through the base material 10 from the first surface 11 to thesecond surface 12.

In the example, the base material 10 is, for example, plate-shaped(discal). The first surface 11 and the second surface 12 each are, forexample, planes. However, the first surface 11 and the second surface 12may be curved surfaces. One hole 13 is located at the center of the basematerial 10. For example, a member such as an injector or the like thatinjects the raw material gas of the plasma is located at the hole 13.The raw material gas of the plasma passes through the hole 13 and isintroduced to the interior of the chamber 110. However, the hole 13 maynot be a hole that supplies the raw material gas for plasma generationinto the chamber 110, and may be any hole that extends through the basematerial 10. The hole 13 may not be at the center of the base material10; and multiple holes 13 may be provided.

The direction from the first surface 11 toward the second surface 12 istaken as a Z-direction (a first direction). One direction perpendicularto the Z-direction is taken as an X-direction; and a directionperpendicular to the Z-direction and the X-direction is taken as aY-direction. For example, the first surface 11 and the second surface 12are perpendicular to the Z-direction and extend along the X-Y plane.

The hole 13 (an inner perimeter surface 13 s of the hole) includes afirst hole part 13 a, a second hole part 13 b, and a third hole part 13c. The hole 13 is, for example, circular when viewed along theZ-direction. The inner perimeter surface 13 s is the inner perimetersurface of the base material 10 that defines the hole 13. The innerperimeter surface 13 s faces the interior of the hole 13 and crosses theX-Y plane.

The first hole part 13 a is a region of the inner perimeter surface 13 sthat is positioned at the vicinity of the first surface 11 and is nextto the first surface 11. The first hole part 13 a is continuous with thefirst surface 11. The first hole part 13 a is positioned between thefirst surface 11 and the second surface 12 in the Z-direction. The firsthole part 13 a is an oblique surface that is not parallel to the firstsurface 11 and crosses the first surface 11 and the Z-direction. Thefirst hole part 13 a may be a surface that extends parallel to theZ-direction. In the example, the first hole part 13 a has astraight-line shape in a cross section parallel to the Z-direction suchas in FIG. 2. However, in the cross section parallel to the Z-direction,the first hole part 13 a may not have a straight-line shape and may be,for example, curved. When viewed along the Z-direction (i.e., whenprojected onto the X-Y plane), for example, the first hole part 13 a hasa ring shape surrounded with the first surface 11.

In the example, a boundary 14 at which the first surface 11 and thefirst hole part 13 a contact is a corner in the cross section parallelto the Z-direction. However, the first surface 11 and the first holepart 13 a may be smoothly connected. In other words, in the crosssection of FIG. 2, the boundary 14 may be rounded or curved, and mayhave a curvature.

The second hole part 13 b is positioned between the first hole part 13 aand the second surface 12 in the Z-direction. In other words, theZ-direction position of the second hole part 13 b is between theZ-direction position of the first hole part 13 a and the Z-directionposition of the second surface 12. For example, the second hole part 13b is a region of the inner perimeter surface 13 s that is positioned atthe vicinity of the second surface 12 and is next to the second surface12. Also, the second hole part 13 b may be continuous with the secondsurface 12. The second hole part 13 b extends in the Z-direction and is,for example, parallel to the Z-direction. For example, the second holepart 13 b is included in a perpendicular surface that is substantiallyperpendicular to the second surface 12. When viewed along theZ-direction, for example, the second hole part 13 b has a ring shapepositioned inside the first hole part 13 a.

The third hole part 13 c is positioned between the first hole part 13 aand the second hole part 13 b in the Z-direction. In other words, theZ-direction position of the third hole part 13 c is between theZ-direction position of the first hole part 13 a and the Z-directionposition of the second hole part 13 b. The third hole part 13 c is aregion of the inner perimeter surface 13 s that is continuous with thefirst hole part 13 a. The third hole part 13 c is an oblique surfacethat is not parallel to the first surface 11 and crosses the firstsurface 11 and the Z-direction. The third hole part 13 c may be asurface that extends in the Z-direction. In the example, the third holepart 13 c has a straight-line shape in the cross section parallel to theZ-direction. However, in the cross section parallel to the Z-direction,the third hole part 13 c may not have a straight-line shape and may be,for example, curved. When viewed along the Z-direction, for example, thethird hole part 13 c has a ring shape that is surrounded with the firsthole part 13 a and contacts the first hole part 13 a; and the secondhole part 13 b is positioned inward of the third hole part 13 c. Thethird hole part 13 c and the second hole part 13 b may be continuous.

In the example, the direction in which the first hole part 13 a extendsand the direction in which the third hole part 13 c extends are on thesame straight line in the cross section parallel to the Z-direction. Inother words, an angle θ1 between the third hole part 13 c and theZ-direction is equal to an angle θ2 between the first hole part 13 a andthe Z-direction. However, the angle θ1 and the angle θ2 may be differentfrom each other.

In the example, a boundary 17 at which the second hole part 13 b and thethird hole part 13 c contact is a corner in the cross section parallelto the Z-direction. However, the second hole part 13 b and the thirdhole part 13 c may be smoothly connected. In other words, the boundary17 in the cross section of FIG. 2 may be rounded or curved, and may havea curvature.

The hole 13 (the inner perimeter surface 13 s of the hole) also includesan oblique surface 13 ac. The oblique surface 13 ac is, for example, asurface that includes the first and third hole parts 13 a and 13 c. Theoblique surface 13 ac is continuous with the first surface 11 and isoblique to the first surface 11 and the Z-direction. The oblique surface13 ac is continuous with the perpendicular surface (the second hole part13 b) and connects the first surface 11 and the second hole part 13 b.In the example, the oblique surface 13 ac that is formed of the firstand third hole parts 13 a and 13 c has a straight-line shape in thecross section parallel to the Z-direction. However, the oblique surface13 ac may be curved.

An angle θα between the first surface 11 and the oblique surface 13 acis greater than an angle θβ between the second hole part 13 b (theperpendicular surface) and the oblique surface 13 ac. For example, theangle θα is the angle between the first surface 11 and the first holepart 13 a; and the angle θβ is the angle between the second hole part 13b and the third hole part 13 c.

The plasma corrosion resistance of the ceramic layer 20 is greater thanthe plasma corrosion resistance of the base material 10. The ceramiclayer 20 is located on the base material 10. More specifically, as shownin FIG. 2, the ceramic layer 20 includes a first part 21 and a secondpart 22. The first part 21 is located on the first surface 11 andcontacts the first surface 11. The first part 21 is located oversubstantially the entire first surface 11. The second part 22 is locatedon the first hole part 13 a and contacts the first hole part 13 a. Asurface 21 s of the first part 21 and a surface 22 s of the second partdirectly contact the plasma inside the chamber 110. That is, the surface21 s is at a side opposite to the surface of the first part 21contacting the first surface 11, and is exposed inside the chamber 110.The surface 22 s is at the side opposite to the surface of the secondpart 22 contacting the first hole part 13 a, and is exposed inside thechamber 110. The first surface 11 is covered with the first part 21 andtherefore does not directly contact the plasma. The first hole part 13 ais covered with the second part 22 and therefore does not directlycontact the plasma. That is, the first surface 11 and the first holepart 13 a are covered with the ceramic layer 20; and the ceramic layer20 is configured to be exposed to the plasma. The surface 21 s is, forexample, a plane that is parallel to the X-Y plane. The surface 21 s maybe a curved surface. The surface 22 s is an oblique surface that crossesthe surface 21 s and the Z-direction. The surface 21 s may extend in theZ-direction.

The ceramic layer 20 is not located on the second surface 12, on thesecond hole part 13 b, or on the third hole part 13 c. In other words,in the example, the region of the inner perimeter surface 13 s of thehole 13 at which the ceramic layer 20 is located is the first hole part13 a; and the region of the inner perimeter surface 13 s at which theceramic layer 20 is not located is the second and third hole parts 13 band 13 c. The third hole part 13 c contacts the edge of the second part22. The second hole part 13 b and the third hole part 13 c are exposedto the plasma inside the chamber 110 and directly contact the plasma.The second hole part 13 b and the third hole part 13 c are not coveredwith the ceramic layer 20.

The arithmetical mean height Sa of the surface 21 s of the first part 21is less than the arithmetical mean height Sa of the surface 22 s of thesecond part 22. The arithmetical mean height Sa (the surface roughness)can be evaluated by methods described below. For example, the surfaceroughness of the first part 21 (the roughness of the surface 21 s) isless than the surface roughness of the second part 22 (the roughness ofthe surface 22 s).

As described above, it is desirable for a semiconductor manufacturingapparatus member that contacts plasma to be plasma-resistant to reduceparticles. Therefore, a conventional method includes coating the surfaceof the semiconductor manufacturing apparatus member with a coating (alayer) that has excellent plasma resistance. However, even if a coatingthat has high plasma resistance (e.g., Y₂O₃, etc.) coats the greaterpart of the semiconductor manufacturing apparatus member (e.g., the topplate member) other than the holes, there is a risk that recent demandsfor reducing the particles will not be sufficiently satisfied.Therefore, for example, it is desirable also to control the particlesfrom the holes. It is considered that particles from the holes mayinclude, for example, particles produced by the detachment of portionsof the coating located in the holes, particles from a member (e.g., aninjector) located in a hole, etc.

Conversely, according to the embodiment, the ceramic layer 20 is locatedat the first hole part 13 a and the first surface 11 of the basematerial 10; and the arithmetical mean height Sa of the surface 21 s ofthe first part 21 on the first surface 11 is less than the arithmeticalmean height Sa of the surface 22 s of the second part 22 on the firsthole part 13 a. The production or effects of the particles can bereduced thereby.

For example, by setting the arithmetical mean height Sa (the surfaceroughness) of the surface 21 s of the first part 21 contacting thecorrosive plasma to be relatively small, the production of particlesfrom the first part 21 can be effectively suppressed. In other words,for example, the first part has a smooth structure; and the productionof particles and cracks that start from an unevenness of the first part21 can be suppressed. For example, the particles that detach from theceramic layer 20 when a portion of the first part 21 is corroded by theplasma can be suppressed.

Also, the production or effects of the particles from the hole 13 can besuppressed by setting the arithmetical mean height Sa (the surfaceroughness) of the surface 22 s of the second part 22 on the first holepart 13 a to be relatively large. For example, it is considered thatthere are cases where the effects of the electric field on the secondpart 22 are greater than on the first part 21 because the second part 22is located on the first hole part 13 a. That is, when the first part 21that is located on the first surface 11 is exposed to the plasma, thereare cases where the electric field concentrates more easily at thesecond part 22 on the first hole part 13 a than at the first part 21because the second part 22 is at the edge vicinity of the hole 13. Thedamage due to the plasma at the part at which the electric fieldconcentrates is large because the electric field intensity is large andthe plasma is concentrated. There is a risk that the damaged part maydetach from the ceramic layer 20 and produce particles. Conversely,according to the embodiment, by setting the arithmetical mean height Saof the surface 22 s of the second part 22 to be relatively large, thesurface area of the second part 22 can be increased, and theconcentration of the electric field can be relaxed.

By setting the arithmetical mean height Sa of the surface 22 s of thesecond part 22 located at the edge vicinity (the outlet vicinity) of thehole 13 to be relatively large, the particles that are produced from thehole 13 can be caught by the second part 22; and the effects of theparticles can be more effectively suppressed.

When a plasma generation gas passes through the hole 13, the temperatureat the hole periphery is changed by the injection of the gas. Therefore,there is a risk that the thermal stress of the second part 22 may begreater than the thermal stress of the first part 21. There is a riskthat cracks and/or particles may be produced in the second part 22 bythe thermal stress. Conversely, by setting the arithmetical mean heightSa of the surface 22 s of the second part 22 to be relatively large, thesurface area of the second part 22 can be large, and the heat dispersion(heat dissipation) effect of the second part 22 can be increased. Theoccurrence of cracks and/or particles of the second part 22 can besuppressed thereby.

For example, it is desirable for the surface roughness of the secondpart 22 to be not less than 2 times and not more than 10 times, and morefavorably not more than 5 times the surface roughness of the first part.It is desirable for the arithmetical mean height Sa of the surface 22 sof the second part 22 to be not less than 2 times and not more than 10times, and more favorably not more than 5 times the arithmetical meanheight Sa of the surface 21 s of the first part 21. The arithmeticalmean height Sa of the surface 22 s of the second part 22 is, forexample, less than 0.5 micrometers (μm) and, for example, not less than0.005 μm. The arithmetical mean height Sa of the surface 21 s of thefirst part 21 is, for example, less than 0.1 μm and, for example, notless than 0.001 μm. According to such a configuration, the production oreffects of the particles can be more reliably reduced.

For example, the surface roughness of the third hole part 13 c isgreater than the surface roughness of the first part 21 and greater thanthe surface roughness of the second part 22. For example, thearithmetical mean height Sa of the third hole part 13 c is greater thanthe arithmetical mean height Sa of the surface 21 s of the first part 21and greater than the arithmetical mean height Sa of the surface 22 s ofthe second part 22.

In the example as described above, the ceramic layer 20 is not locatedon the third hole part 13 c; and the inner wall of the hole 13 isexposed. That is, the third hole part 13 c is the boundary part betweenthe ceramic layer 20 and the inner wall of the hole 13 and is the basematerial end part contacting the plasma. By setting the arithmeticalmean height Sa (the surface roughness) of such a base material end part(third hole part 13 c) to be relatively large, the surface area of thebase material end part can be increased, and the concentration of theelectric field at the base material end part can be relaxed. Forexample, the plasma damage due to the electric field concentration atthe base material end part can be suppressed, and the production ofparticles from the base material end part can be suppressed thereby.

For example, it is desirable for the surface roughness of the third holepart 13 c to be greater than 2 times the surface roughness of the firstpart 21. It is also favorable for the surface roughness of the thirdhole part 13 c to be not more than 10 times the surface roughness of thefirst part 21. It is desirable for the arithmetical mean height Sa ofthe third hole part 13 c to be greater than 2 times the arithmeticalmean height Sa of the surface 21 s of the first part 21. It is alsofavorable for the arithmetical mean height Sa of the third hole part 13c to be not more than 10 times the arithmetical mean height Sa of thesurface 21 s of the first part 21. According to such a configuration,the production or effects of the particles can be more reliably reduced.

The surface roughness of the third hole part 13 c may be greater thanthe surface roughness of the first part 21 and less than the surfaceroughness of the second part 22. For example, the arithmetical meanheight Sa of the third hole part 13 c may be greater than thearithmetical mean height Sa of the surface 21 s of the first part 21 andless than the arithmetical mean height Sa of the surface 22 s of thesecond part 22.

There are cases where particles are easily produced from the basematerial 10 because the plasma and the base material 10 directly contactat the third hole part 13 c. Conversely, according to the embodiment,the third hole part 13 c is positioned more distant to the first andsecond surfaces 11 and 12 compared to the first and second hole parts 13a and 13 b. Furthermore, the production of particles from the third holepart 13 c can be further reduced when the arithmetical mean height Sa ofthe third hole part 13 c is less than the arithmetical mean height Sa ofthe surface of the second part 22. In other words, for example, theoccurrence of cracks and/or particles starting from the unevenness ofthe third hole part 13 c can be suppressed. Particles that are generatedby a portion of the third hole part 13 c detaching from the basematerial 10 can be suppressed.

As described above, when the base material 10 is corroded by contactwith the plasma, there is a risk that fine particles may be producedfrom the base material 10, and the yield of the semiconductor device tobe manufactured may be reduced. Therefore, the surface of the basematerial 10 that contacts the plasma is covered with a ceramic layerthat has higher plasma corrosion resistance than the base material 10.For example, the hole 13 that is provided in the base material 10includes a perpendicular surface that is perpendicular to the first andsecond surfaces of the base material 10; however, there are cases whereparticles are produced from the hole 13 by a portion of the plasmaflowing around inside the hole 13 and corroding the inner wall of thehole 13. Therefore, a method may be considered in which a ceramic layerhaving high plasma corrosion resistance is located at the inner wall(e.g., the perpendicular surface) of the hole 13 as well. However, forexample, there is a possibility that the ceramic layer inside the hole13 may be relatively fragile, and particles may be produced if thefragile ceramic layer is corroded by the plasma. Also, there are caseswhere plasma concentration easily occurs at the oblique surfaces (thefirst hole part 13 a and the third hole part 13 c) between the firstsurface 11 and the second hole part 13 b.

Conversely, according to the embodiment, in the oblique surface 13 acthat is formed of the first and third hole parts 13 a and 13 c, thesecond part 22 of the ceramic layer 20 is located at the first hole part13 a that is relatively proximate to the first part 21 that contacts theplasma. The production of particles from the first hole part 13 a can beeffectively suppressed thereby. On the other hand, the third hole part13 c of the oblique surface 13 ac that is relatively distant to thefirst part 21 contacts the plasma. In other words, the third hole part13 c that is distant to the first part 21 and has a relatively lowplasma corrosion risk compared to the first hole part 13 a is notcovered with the ceramic layer 20; and the base material 10 directlycontacts the plasma at the third hole part 13 c. Particles that areproduced from the ceramic layer when the ceramic layer having degradedcharacteristics is formed at the third hole part 13 c can be effectivelysuppressed thereby.

When the oblique surface 13 ac is curved in the cross section parallelto the Z-direction, there are cases where the electric field isconcentrated and particles are produced at the oblique surface 13 ac orthe ceramic layer 20 on the oblique surface 13 ac. Conversely, when theoblique surface 13 ac has a straight-line shape in the cross sectionparallel to the Z-direction, the oblique surface 13 ac or the electricfield concentration at the ceramic layer 20 on the oblique surface 13 accan be more relaxed.

For example, the second part 22 of the ceramic layer 20 is thinner thanthe first part 21. In other words, a thickness T22 of the second part 22is less than a thickness T21 of the first part 21. By setting the firstpart 21 that is easily exposed to the plasma to be thicker than thesecond part 22, the production of particles from the first surface 11can be further suppressed. On the other hand, by setting the second part22 that is exposed to the plasma less easily than the first part 21 tobe relatively thin, for example, the collapse of the ceramic layer 20 atthe second part 22 can be suppressed and the production of particles canbe further suppressed. For example, by setting the film thickness of thesecond part to be thin, the strain and/or the internal stress in thefilm can be relaxed, and the collapse of the film can be suppressed.

The thickness of the ceramic layer 20 is the distance from the surfaceof the base material 10 to the surface of the ceramic layer 20.Specifically, the thicknesses (thicknesses T11 and T22) of the ceramiclayer 20 are determined as follows. The thickness of the ceramic layer20 is determined by cutting the semiconductor manufacturing apparatusmember 120 parallel to the Z-direction as in FIG. 2 and observing thefracture surface by using a scanning electron microscope (SEM). Forexample, the thickness T21 of the first part 21 is the length from thefirst surface 11 to the surface 21 s along a direction perpendicular tothe first surface 11. For example, the thickness T22 of the second part22 is the length from the first hole part 13 a to the surface 22 s alonga direction perpendicular to the first hole part 13 a. For example, SEMmay be performed using the HITACHI S-5500 and the SEM observationconditions of a magnification of 5000 times and an acceleration voltageof 15 kV. When there is fluctuation of the thickness in thecross-sectional image, measurements are performed at multiple locations,and the average value of the measurements is calculated. A known methodcan be utilized to make the thickness T22 of the second part 22 lessthan the thickness T21 of the first part 21, e.g., the film formationtimes can be different (the film formation time of the second part isset to be less than the film formation time of the first part), thepolishing amounts are different (the polishing amount of the second partis set to be greater than the polishing amount of the first part), etc.

The edge part (the boundary 14) that is formed of the first surface 11and the oblique surface 13 ac is positioned proximate to the plasmairradiation surface (the surface 21 s). Therefore, there are cases wherethe plasma easily concentrates at the edge part vicinity (the ceramiclayer 20 on the edge part). Conversely, according to the embodiment, theangle θα between the first surface 11 and the oblique surface 13 ac isgreater than the angle θβ between the oblique surface 13 ac and theperpendicular surface (the second hole part 13 b). By setting the angleθα to be relatively large, the plasma concentration at the edge partvicinity formed by the first surface 11 and the oblique surface 13 accan be relaxed, and the production of particles can be suppressed. Onthe other hand, when the angle θβ is large, the plasma more easilypenetrates the interior of the hole 13. Conversely, by setting the angleθβ to be relatively small, the penetration of the plasma into theinterior of the hole 13 can be effectively suppressed.

The length in the Z-direction of the second hole part 13 b is easilyincreased by setting the angle θα to be greater than the angle θβ. Forexample, a length Ln shown in FIG. 6A described below is greater thanthe length Ln shown in FIG. 6B. Also, for example, in FIG. 2, theposition of the boundary 17 can be moved downward and the length of thesecond hole part 13 b in the Z-direction can be increased by increasingthe angle θα while maintaining the straight-line shape of the obliquesurface 13 ac and without changing the thickness of the base material 10(the Z-direction positions of the first and second surfaces 11 and 12)or the diameter of the hole 13 (the X-direction positions of theboundaries 14 and 17). For example, the flow (the directionality) of theraw material gas of the plasma flowing into the chamber through the hole13 is regulated by the second hole part 13 b; therefore, the flow of theraw material gas is easily stabilized by making the second hole part 13b long. Also, when a unit such as an injector or the like is fixed tothe second hole part 13 b, the unit is easily mounted and the exposureof the unit to the plasma can be suppressed by making the second holepart 13 b long.

It is favorable for the boundary 14 and the boundary 17 to be beveled.The plasma concentration at the boundary 17 and/or the ceramic layer 20on the boundary 14 can be more relaxed thereby.

The angle θα is, for example, not less than 150° and not more than 180°,and favorably not less than 160° and not more than 180°. The plasmaconcentration at the edge part vicinity formed by the first surface 11and the oblique surface 13 ac can be more relaxed thereby, and theproduction of particles can be further suppressed.

The angle θβ is, for example, greater than 90° and not more than 120°,and favorably greater than 90° and not more than 105°. The penetrationof the plasma into the hole interior can be more effectively suppressedthereby.

For example, the density of the second part 22 is greater than thedensity of the first part 21. Also, for example, the hardness of thesecond part 22 is greater than the hardness of the first part 21.

In the maintenance and/or handling of the semiconductor manufacturingapparatus member, there are cases where the vicinity of the hole 13 (anda through-hole 313 described below) physically contact another member(e.g., a sponge cleaning pad, a jig such as a pin, etc.). There is arisk that wear, damage, or delamination may occur at the vicinity of thehole 13 (and the through-hole 313) due to such physical contact, andparticles may be produced. For example, when handling the semiconductormanufacturing apparatus member, there are cases where a jig such as apositioning pin or the like is inserted into the hole 13. Compared tothe first part 21, the likelihood of such a jig physically contactingthe second part 22 located in the hole 13 is high. Also, for example,during maintenance of the semiconductor manufacturing apparatus member,there are cases where surface cleaning of the first surface 11 side isperformed, and a member such as a cleaning pad or the like contacts thefirst and second parts 21 and 22. At this time, there are cases wherethe force that is applied from the cleaning pad to the second part 22located in the hole 13 is greater than the force applied from thecleaning pad to the first part 21 on the first surface 11 due to theshape of the hole 13. Generally, the contact area between the cleaningpad and the semiconductor manufacturing apparatus member is smaller atthe second part 22 positioned at the oblique surface than at the firstpart 21 positioned at the planar part. Accordingly, when a constantforce is applied to the cleaning pad, the force per unit area on thesecond part 22 is greater by the amount that the contact area issmaller.

Conversely, by setting the density of the second part 22 to berelatively high, the damage and/or delamination of the second part 22due to physical contact in the maintenance or handling of thesemiconductor manufacturing apparatus member can be suppressed.Accordingly, the production of particles can be further suppressed.Also, by setting the hardness of the second part 22 to be relativelyhigh, the damage and/or the delamination of the second part 22 due tophysical contact in the maintenance or handling of the semiconductormanufacturing apparatus member can be suppressed. Accordingly, theproduction of particles can be further suppressed.

FIGS. 3A to 3C are cross-sectional views illustrating portions of othersemiconductor manufacturing apparatus members according to the firstembodiment.

The shapes of the holes 13 of the semiconductor manufacturing apparatusmembers 120 a to 120 c illustrated in FIGS. 3A to 3C are different fromthat of the semiconductor manufacturing apparatus member 120 describedwith reference to FIGS. 1 and 2. Otherwise, the semiconductormanufacturing apparatus members 120 a to 120 c are similar to thesemiconductor manufacturing apparatus member 120.

In the semiconductor manufacturing apparatus member 120 a illustrated inFIG. 3A, the first hole part 13 a and the third hole part 13 c each havestraight-line shapes in the cross section parallel to the Z-direction.In FIG. 3A, in the cross section parallel to the Z-direction, thedirection in which the first hole part 13 a extends and the direction inwhich the third hole part 13 c extends are not on the same straight lineand are non-parallel. For example, the angle θ1 between the third holepart 13 c and the Z-direction is less than the angle θ2 between thefirst hole part 13 a and the Z-direction.

In the semiconductor manufacturing apparatus member 120 a, a boundary 15at which the first hole part 13 a and the third hole part 13 c contactis a corner in the cross section parallel to the Z-direction. However,the boundary 15 in the cross section of FIG. 3A may be rounded orcurved, and may have a curvature.

In the semiconductor manufacturing apparatus member 120 b illustrated inFIG. 3B, in the cross section parallel to the Z-direction, the thirdhole part 13 c has a straight-line shape, and the first hole part 13 ais bent. For example, the first hole part 13 a includes a first region16 a contacting the first surface 11, and a second region 16 bcontacting the third hole part 13 c. In the cross section of FIG. 3B,the first region 16 a and the second region 16 b each have straight-lineshapes. The first region 16 a and the second region 16 b may be curved.

In the example of FIG. 3B, the direction in which the first region 16 aextends and the direction in which the second region 16 b extends arenot on the same straight line and are non-parallel. For example, anangle θ3 between the second region 16 b and the Z-direction is less thanan angle θ4 between the first region 16 a and the Z-direction. In theexample of FIG. 3B, the direction in which the second region 16 bextends and the direction in which the third hole part 13 c extends areon the same straight line.

In the semiconductor manufacturing apparatus member 120 b, a boundary 16c at which the first region 16 a and the second region 16 b contact is acorner in the cross section parallel to the Z-direction. However, theboundary 16 c in the cross section of FIG. 3B may be rounded or curved,and may have a curvature.

In the semiconductor manufacturing apparatus member 120 c illustrated inFIG. 3C, the first hole part 13 a includes the first region 16 a and thesecond region 16 b; and the boundary 16 c is a corner. The boundary 15between the first hole part 13 a and the third hole part 13 c also is acorner. The boundary 15 and the boundary 16 c may be rounded or curved,and may have curvatures. As described above, the cross-sectional shapeof the hole 13 may be bent or curved as appropriate.

To evaluate the arithmetical mean height Sa, the arithmetical meanheight Sa of the surface (the arithmetical mean height of the surface)of the evaluation object is measured using a laser microscope. Thearithmetical mean height Sa is specified in international standard ISO025178 (JIS B 0681) related to three-dimensional surfacecharacteristics.

“VK-X1000/KEYENCE” is used as the laser microscope. The magnification ofthe objective lens is set to 1000 times. The S-filter is set to 2.5 μmor 0.8 μm, and the L-filter is set to 0.5 mm.

The arithmetical mean height is the three-dimensional expansion of thetwo-dimensional arithmetic average roughness Ra, and is athree-dimensional roughness parameter (a three-dimensional heightdirection parameter). Specifically, the arithmetical mean height Sa isthe volume of the part surrounded with the surface configuration curvedsurface and the mean plane divided by the measurement area. Thearithmetical mean height Sa is defined by the following formula, inwhich the mean plane is the xy plane, the vertical direction is thez-axis, and the measured surface configuration curve is z(x, y). Here,“A” in Formula (1) is the measurement area.

[Formula1] $\begin{matrix}{{Sa} = {\frac{1}{A}{\int{\int\limits_{A}{{❘{z\left( {x,y} \right)}❘}{dxdy}}}}}} & {{Formula}(1)}\end{matrix}$

The density of the ceramic layer 20 indicates the magnitude of the gap(nanolevel) between the grains included in the film. The density of theceramic layer 20 (the densities of the first part 21, the second part22, a third part 23 described below, etc.) can be evaluated using, forexample, a luminance Sa calculated by a method recited in JapanesePatent No. 6597922. According to the embodiment, a high densitycorresponds to a low luminance Sa.

According to the embodiment, the surface hardnesses of the ceramic layer20 and the base material 10 (the hardnesses of the first part 21, thesecond part 22, a first hole region 313 a described below, a third holeregion 313 c described below, etc.) can be evaluated using the methodspecified in ISO 14577. Specifically, the hardness measurement isperformed using an ultra-micro indentation hardness test(nanoindentation) of the surface of the evaluation object. The indenteris a Berkovich indenter; the indentation depth is the fixed value of 200nm; and the indentation hardness HIT is measured. A surface withoutscratches or dents is selected as the HIT measurement location of thesurface of the evaluation object. More favorably, the surface of theevaluation object is a polished smooth surface. At least 25 measurementpoints are used. The HIT average value of the at least 25 measurementpoints is used as the hardness according to the embodiment. Other testmethods, analysis methods, procedures for verifying the performance oftesters, and conditions necessary for standard reference samples conformto ISO 14577.

According to the embodiment, a high plasma corrosion resistancecorresponds to a small arithmetical mean height Sa of the surface aftera reference plasma resistance test. For example, the reference plasmaresistance test is performed as follows. Plasma is irradiated on thesurface of the evaluation object such as the ceramic layer, the basematerial, etc. An inductively coupled plasma reactive ion etchingapparatus (Muc-21 Rv-Aps-Se/Sumitomo Precision Products Co., Ltd.) isused as the plasma etching apparatus. The conditions of the plasmaetching are set to an ICP output of 1500 W and a bias output of 750 W asthe power supply output, a gas mixture of 100 ccm of CH F₃ gas and 10ccm of O₂ gas as the process gas, a pressure of 0.5 Pa, and a plasmaetching time of 1 hour. The state of the surface of the evaluationobject after plasma irradiation is imaged using a laser microscope.Specifically, the laser microscope “OLS4500/Olympus Corporation” isused, and an objective lens of the MPLAPON100×LEXT (a numerical apertureof 0.95, a working distance of 0.35 mm, a focus spot diameter of 0.52μm, and a measurement region 128×128 μm) is used, and the magnificationis set to 100 times. The λc filter of the waviness component removal isset to 25 μm. The measurement is performed at any three locations; andthe average value is used as the arithmetical mean height Sa. Otherwise,the three-dimensional surface characteristics international standard ISO25178 is referred to as appropriate. As one aspect of the invention, itis favorable for the arithmetical mean height Sa of the surface of theceramic layer or the base material after the “reference plasmaresistance test” to be not more than 0.060, and more favorably not morethan 0.030.

A method for calculating the angle θα and the angle θβ of thisspecification will now be described with reference to FIGS. 4A to 4C.

FIGS. 4A to 4C are cross-sectional views illustrating portions of basematerials according to the first embodiment.

A base material 10 a shown in FIG. 4A is similar to the base material 10described with reference to FIG. 2. The first surface 11 extends alongthe X-Y plane. The second hole part 13 b extends along the Z-direction.In the example, the oblique surface 13 ac that connects the firstsurface 11 and the second hole part 13 b has a straight-line shape inthe cross section parallel to the Z-direction. In the cross sectionparallel to the Z-direction, the oblique surface 13 ac extends in astraight-line shape from an edge e1 of the first surface 11 to an edgee2 of the second hole part 13 b. The edge e1 is the point at which thefirst surface 11 contacts the oblique surface 13 ac; and the edge e2 isthe point at which the second hole part 13 b contacts the obliquesurface 13 ac.

When a part P1 of the oblique surface 13 ac that is continuous with thefirst surface 11 has a straight-line shape in the cross section parallelto the Z-direction, the angle θα is the angle between the first surface11 and the part P1. When a part P2 of the oblique surface 13 ac that iscontinuous with the second hole part 13 b has a straight-line shape inthe cross section parallel to the Z-direction, the angle θβ is the anglebetween the second hole part 13 b and the part P2. In the example ofFIG. 4A, the angle θα is formed by the first surface 11 and a linesegment connecting the edge e1 and the edge e2; and the angle θβ isformed by the second hole part 13 b and the line segment connecting theedge e1 and the edge e2. The angle θα and the angle θβ are interiorangles of the base material 10 and are not more than 180°.

As shown in FIGS. 4B and 4C, when the parts P1 and P2 are curved in thecross section parallel to the Z-direction, the angle θα and the angle θβare calculated as follows.

The shape of the oblique surface 13 ac of a base material 10 b shown inFIG. 4B is different from that of the base material 10 a. In the basematerial 10 b, in the cross section parallel to the Z-direction, thepart P1 of the oblique surface 13 ac that is continuous with the firstsurface 11 has a curved shape; and the part of the oblique surface 13 acthat is continuous with the part P1 has a straight-line shape. In such acase, as shown in FIG. 4B, the angle θα is formed by the first surface11 and a line segment L1. The line segment L1 connects the edge e1 andan edge e4; and the edge e4 is the end point of the straight-line partof the oblique surface 13 ac that is continuous with the part P1. In thebase material 10 b, in the cross section parallel to the Z-direction,the part P2 of the oblique surface 13 ac that is continuous with thesecond hole part 13 b has a curved shape; and the part of the obliquesurface 13 ac that is continuous with the part P2 has a straight-lineshape. In such a case, as shown in FIG. 4B, the angle θβ is formed bythe second hole part 13 b and a line segment L2. The line segment L2connects the edge e2 and an edge e3; and the edge e3 is the end point ofthe straight-line part of the oblique surface 13 ac that is continuouswith the part P2. In the example, the part of the oblique surface 13 acbetween the part P1 and the part P2 is a straight-line part P3; the edgee3 of the part P3 is the point at which the part P3 contacts the partP1; and the edge e4 of the part P3 is the point at which the part P3contacts the part P2.

The shape of the oblique surface 13 ac of a base material 10 c shown inFIG. 4C is different from that of the base material 10 a. In the basematerial 10 c, the oblique surface 13 ac is a curve in the cross sectionparallel to the Z-direction. In such a case, as shown in FIG. 4C, theangle θα is formed by the first surface 11 and a line segment L3connecting the edge e1 and the edge e2. Also, in such a case, as shownin FIG. 4C, the angle θβ is formed by the second hole part 13 b and theline segment L3.

The base material 10 may be one of a metal, a ceramic, glass, a plastic,or a combination of such materials. It is favorable for the basematerial 10 to be a metal or a ceramic. The metal can include aluminumor an aluminum alloy having anodic oxidation (alumite treatment)performed on the surface. The ceramic can include aluminum oxide(alumina), aluminum nitride, etc.

The ceramic layer 20 includes, for example, a polycrystalline ceramic.The ceramic layer 20 is the layer having a ceramic as a major component.The ceramic layer 20 includes, for example, at least one selected fromthe group consisting of an oxide of a rare-earth element, a fluoride ofa rare-earth element, and an acid fluoride of a rare-earth element. Forexample, at least one selected from the group consisting of Y, Sc, Yb,Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu are examplesof the rare-earth element. More specifically, the ceramic layer 20includes at least one selected from the group consisting of an oxide ofyttrium (Y₂O₃ and Y_(α)O_(β) (nonstoichiometric composition)), anyttrium oxyfluoride (YOF, Y₅O₄F₇, Y₆O₅F₈, Y₇O₆F₉, and Y₁₇O₁₄F₂₃),(YO_(0.826)F_(0.17))F_(1.174), YF₃, Er₂O₃, Gd₂O₃, Nd₂O₃, Y₃Al₅O₁₂,Y₄Al₂O₉, Y₂O₃—ZrO₂, Er₃Al₅O₁₂, Gd₃Al₅O₁₂, Er₄Al₂O₉, ErAlO₃, Gd₄Al₂O₉,GdAlO₃, Nd₃Al₅O₁₂, Nd₄Al₂O₉, and NdAlO₃. The ceramic layer 20 mayinclude at least one selected from the group consisting of Fe, Cr, Zn,and Cu.

For example, the ceramic layer 20 includes yttrium and at least one offluorine or oxygen. The ceramic layer 20 includes, for example, yttriumoxide (Y₂O₃), yttrium fluoride (YF₃), or yttrium oxyfluoride (YOF) as amajor component.

In the specification, “major component” refers to the inclusion of morethan 50% of the component, and favorably not less than 70%, morefavorably not less than 90%, more favorably not less than 95%, and mostfavorably 100%. Here, “%” is, for example, the mass %.

Or, the ceramic layer 20 may be a compound other than an oxide, afluoride, and an oxyfluoride. Specifically, a compound (a chloride and abromide) including CI and/or Br are examples.

In the semiconductor manufacturing apparatus member 120, the ceramiclayer 20 may include only a polycrystalline ceramic, and may include apolycrystalline ceramic and an amorphous ceramic.

The average crystallite size of the polycrystalline ceramic of theceramic layer 20 is not less than 3 nm and not more than 50 nm. Theupper limit is favorably 30 nm, more favorably 20 nm, and more favorably15 nm. A favorable lower limit is 5 nm.

The “average crystallite size” can be determined using the followingmethod.

First, a transmission electron microscope (TEM) image is imaged usingnot less than a magnification of 400,000 times. The average value of thediameters of fifteen crystallites calculated using a circleapproximation in the image is used as the average crystallite size. Atthis time, the crystallite can be discriminated more clearly by settingthe sample thickness in the FIB processing to be sufficiently thin,e.g., about 30 nm. For example, the imaging magnification can beselected as appropriate in the range of not less than 400,000 times andnot more than 2,000,000 times.

In the manufacturing procedure of the semiconductor manufacturingapparatus member according to the embodiment, first, the base material10 in which the hole 13 is provided is prepared. Then, the shape of thebase material 10 is prepared by an appropriate technique. For example,at least one of blasting, physical polishing, chemical mechanicalpolishing, lapping, or chemical polishing is performed on the basematerial 10. The arithmetical mean height Sa (the surface roughness) andthe shapes of the first surface 11 and the hole 13 (the first hole part13 a, the second hole part 13 b, and the third hole part 13 c) can becontrolled thereby.

Subsequently, the ceramic layer 20 is formed on the base material 10.Finishing polishing is performed after the ceramic layer 20 is formed.The polishing can include at least one of blasting, physical polishing,chemical mechanical polishing, lapping, or chemical polishing. Forexample, the arithmetical mean height Sa and the shape of the ceramiclayer 20 (the surface 21 s of the first part 21 and the surface 22 s ofthe second part 22), the second hole part 13 b, and the third hole part13 c can be controlled thereby.

The method of forming the ceramic layer 20 on the base material 10 caninclude, for example, a method such as thermal spraying, CVD, ALD(Atomic Layer Deposition), PVD (Physical Vapor Deposition), aerosoldeposition, etc.

When the ceramic layer 20 is formed on the base material 10, forexample, the film that becomes the ceramic layer 20 may be formed byproviding a mask of tape, etc., on the part that becomes the third holepart 13 c when using aerosol deposition, thermal spraying, CVD, or PVD.The second hole part 13 b and the third hole part 13 c that are exposedwhere the ceramic layer 20 is not located are formed by removing themask after the film formation. Or, the second hole part 13 b and thethird hole part 13 c that are exposed may be formed by removing aportion of a film by using polishing, etc., after the film formationwithout using a mask.

According to the method for forming the ceramic layer 20, there arecases where the ceramic layer 20 is not easily formed on the third holepart 13 c that is the inner perimeter surface 13 s of the hole 13compared to the first surface 11. In other words, for example, whenusing a method of forming the ceramic layer by supplying (e.g., causingcollisions of) raw material particles to the base material 10 from thefirst surface 11 side by using PVD, thermal spraying, aerosoldeposition, etc., the third hole part 13 c is separated from the firstsurface 11 and oblique to the first surface 11; and there are caseswhere the raw material particles reach the third hole part 13 c in adifferent state from the plane because it is difficult for the rawmaterial particles to reach the third hole part 13 c, etc. In such acase, if the ceramic layer 20 is formed on the third hole part 13 c, thequality (e.g., the density, the hardness, etc.) of the ceramic layer 20formed on the third hole part 13 c may be lower than the quality of theceramic layer 20 formed on the first surface 11. There is a risk thatportions of the low-quality fragile ceramic layer 20 may easily detachfrom the base material and become a production source of particles.Instead, the production of particles can be reduced by not providing theceramic layer 20 at the third hole part 13 c.

As in the third hole part 13 c, there are cases where it is difficult toform the ceramic layer at the inner wall (the perpendicular surface) ofthe hole 13. When the ceramic layer is located inside the hole 13, thereare cases where characteristics (e.g., the density and the filmthickness) of the ceramic layer inside the hole 13 degrade compared tothe characteristics of the ceramic layer located on the first surface ofthe base material. Particles are produced when a fragile ceramic layerinside the hole 13 is corroded by the plasma. For example, themechanical properties (e.g., the toughness, the hardness, the strengthwith respect to an external force, etc.) of the ceramic layer havingdegraded characteristics are inferior to the mechanical properties ofthe base material. Therefore, there is a risk that particles may beproduced due to physical impact and/or contact in the handling and/ormaintenance of the semiconductor manufacturing apparatus member.

For example, when forming the ceramic layer 20 by PVD, thermal spraying,aerosol deposition, etc., the film is not easily formed on theperpendicular second hole part 13 b; therefore, the film formation onthe hole interior can be suppressed by making the second hole part 13 blong.

In aerosol deposition, a layer structural component is formed by causingthe fine particles of the material to collide with the base material andby bonding the fine particles on the base material by the impact of thecollisions. On the other hand, in aerosol deposition, when the surfaceof the base material on which the fine particles of the material collideis rough, the fine particles do not easily bond/integrate on the basematerial; and the layer structural component is difficult to form.According to the embodiment, by setting the arithmetical mean height Saof the third hole part 13 c to be relatively large, the formation of afragile ceramic layer on the third hole part 13 c by aerosol depositioncan be more reliably suppressed. Accordingly, the production ofparticles can be suppressed.

Thus, when using aerosol deposition, for example, the formation of theceramic layer on the third hole part 13 c can be suppressed bycontrolling the arithmetical mean height Sa of the third hole part 13 c.When using aerosol deposition, the semiconductor manufacturing apparatusmember is easily manufactured because processes of masking before filmformation, etc., may be omitted.

“Aerosol deposition” is a method of spraying an “aerosol” including fineparticles including a brittle material dispersed in a gas from a nozzletoward a base material such as metal, glass, a ceramic, a plastic, etc.,causing the fine particles to collide with the base material, causingthe brittle material fine particles to deform and fragment due to theimpact of the collisions, and causing the fine particles to bond todirectly form a layer structural component (also called a filmstructural component) made of the constituent materials of the fineparticles on the base material.

In the example, for example, an aerosol that is a mixture of a gas andfine particles of a ceramic material such as yttria or the like havingexcellent particle resistance is sprayed toward the base material 10 toform the layer structural component (the ceramic layer 20).

According to aerosol deposition, a heating unit, a cooling unit, or thelike is not particularly necessary; it is possible to form the layerstructural component at room temperature; and a layer structuralcomponent that has a mechanical strength equal to or greater than thatof a sintered body can be obtained. Also, it is possible to diverselychange the density, the fine structure, the mechanical strength, theelectrical characteristics, etc., of the layer structural component bycontrolling the shape and the composition of the fine particles, theconditions causing the fine particles to collide, etc.

In this specification, “polycrystal” refers to a structure body in whichcrystal grains are bonded/integrated. A crystal substantially includesone crystal grain. Normally, the diameter of the crystal grain is notless than 5 nanometers (nm). However, the crystal grains are apolycrystal when fine particles are assimilated into the structuralcomponent without fragmenting.

In this specification, when the primary particle is a dense particle,“fine particle” refers to an average particle size that is not more than5 micrometers (μm) when identified by a particle size distributionmeasurement, a scanning electron microscope, etc. When the primaryparticle is a porous particle easily fragmented by impacting, “fineparticle” refers to an average particle size that is not more than 50μm.

In this specification, “aerosol” refers to a solid-gas mixed phasesubstance in which the fine particles described above are dispersed in agas such as helium nitrogen, argon, oxygen, dry air, a gas mixtureincluding such elements, etc.; and although there are also cases wherean “agglomerate” is partially included, “aerosol” refers to the state inwhich the fine particles are dispersed substantially independently.Although the gas pressure and the temperature of the aerosol arearbitrary when forming the layer structural component, it is desirablefor the concentration of the fine particles in the gas at the timingwhen sprayed from the dispensing aperture to be within the range of0.0003 mL/L to 5 mL/L when the gas pressure is converted to 1 atmosphereand the temperature is converted to 20 degrees Celsius.

One feature of the process of aerosol deposition is that the processnormally is performed at room temperature, and the formation of thelayer structural component is possible at a temperature that issufficiently less than the melting point of the fine particle material,that is, not more than several hundred degrees Celsius.

In this specification, “room temperature” refers to a temperature thatis markedly less than the sintering temperature of a ceramic, and refersto an environment of substantially 0 to 100° C.; and a room temperatureof about 20° C.±10° C. is most general.

For fine particles included in the powder body used as the raw materialof the layer structural component, a brittle material such as a ceramic,a semiconductor, etc., can be used as a major body, and fine particlesof the same material can be used independently or fine particles havingdifferent particle sizes can be mixed; and it is possible to mix,combine, and use different types of brittle material fine particles. Itis also possible to use fine particles of a metal material, an organicmaterial, etc., by mixing the fine particles of the metal material, theorganic material, etc., with the brittle material fine particles andcoating the fine particles of the metal material, the organic material,etc., onto the surfaces of the brittle material fine particles. Even insuch cases, the brittle material is the major part of the formation ofthe layer structural component.

For the composite structure formed by such techniques, when crystallinebrittle material fine particles are used as the raw material, the partof the layer structural component of the composite structure is apolycrystal having a small crystal grain size compared to the rawmaterial fine particles; and there are many cases where the crystals ofthe polycrystal have substantially no crystal orientation. Also, a grainboundary layer that is made of a glass layer substantially does notexist at the interface between the brittle material crystals. Also, inmany cases, the layer structural component part of the compositestructure forms an “anchor layer” that sticks into the surface of thebase material (in the example, the base material 10). The layerstructural component, in which anchor layer is formed, is formed andadhered securely to the base material with exceedingly high strength.

A layer structural component that is formed by aerosol depositionpossesses sufficient strength and is clearly different from a so-called“powder compact” having a state in which the fine particles are packedtogether by pressure and the form is maintained by physical adhesion.

For aerosol deposition, it can be confirmed thatfragmentation/deformation occurs for the brittle material fine particlesflying onto the base material by using X-ray diffraction, etc., tomeasure the size of the brittle material fine particles used as the rawmaterial and the crystallite (crystal grain) size of the brittlematerial structural component that is formed. In other words, thecrystallite size of the layer structural component formed by aerosoldeposition is less than the crystallite size of the raw material fineparticles. “Nascent surfaces” are formed at the “shear surfaces” and/orthe “fracture surfaces” formed by the fine particles fragmenting and/ordeforming; and the “nascent surfaces” are in the state in which atomsthat existed in the interior of the fine particle and were bonded toother atoms are exposed. It is considered that the layer structuralcomponent is formed by the nascent surfaces, which are active and havehigh surface energy, being bonded to surfaces of adjacent brittlematerial fine particles, bonded to nascent surfaces of brittlematerials, or bonded to the surface of the base material.

When an appropriate amount of hydroxide groups exists at the surfaces ofthe fine particles in the aerosol, it also may be considered that thebonding occurs due to mechano-chemical acid-base dehydration reactionsoccurring due to local shear stress, etc., between the fine particles orbetween the structural component and the fine particles when the fineparticles collide. It is considered that applying a continuousmechanical impact force from the outside causes these phenomena tocontinuously occur; the progression and densification of the bonds occurdue to the repetition of the deformation, the fragmentation, etc., ofthe fine particles; and the layer structural component that is made ofthe brittle material grows.

For example, when the ceramic layer 20 is formed by aerosol deposition,compared to a ceramic sintered body, a spray coat, etc., the ceramiclayer 20 has a dense fine structure and a small crystallite size.Thereby, the particle resistance of the semiconductor manufacturingapparatus member 120 according to the embodiment is greater than theparticle resistance of a sintered body or a spray coat. Also, theprobability of the semiconductor manufacturing apparatus member 120according to the embodiment being a production source of particles isless than the probability of a sintered body, a spray coat, etc., beinga production source of particles.

An example of the semiconductor manufacturing apparatus member 120according to the invention being manufactured by, for example, aerosoldeposition and an apparatus used for the manufacturing will now bedescribed. The apparatus that is used for the aerosol depositionincludes a chamber, an aerosol supplier, a gas supplier, an exhaustpart, and a pipe. For example, a stage at which the base material 10 islocated, a driver, and a nozzle are located inside the chamber. Thepositions of the nozzle and the base material 10 located at the stagecan be relatively changed by the driver. At this time, the distancebetween the nozzle and the base material 10 may be constant or may bechangeable. Although an aspect in which the driver drives the stage isshown in the example, the driver may drive the nozzle. The drivedirections are, for example, the XYZO-directions.

The aerosol supplier is connected with the gas supplier by a pipe. Inthe aerosol supplier, an aerosol in which a gas and raw material fineparticles are mixed is supplied to the nozzle via the pipe. Theapparatus further includes a powder body supplier supplying the rawmaterial fine particles. The powder body supplier may be located in theaerosol supplier or may be located separately from the aerosol supplier.An aerosol former that mixes the raw material fine particles and the gasalso may be included separately from the aerosol supplier. A homogeneousstructural component can be obtained by controlling the supply rate fromthe aerosol supplier so that the amount of the fine particles sprayedfrom the nozzle is constant.

The gas supplier supplies nitrogen gas, helium gas, argon gas, air, etc.Although compressed air in which, for example, impurities such asmoisture, oil, etc., are low is used when the supplied gas is air, it isfavorable also to include an air processor to remove the impurities fromthe air.

An example of the operation of the apparatus used for aerosol depositionwill now be described. In the state in which the base material 10 islocated on the stage inside the chamber, the chamber interior isdepressurized to not more than atmospheric pressure, and specifically toabout several hundred Pa by an exhaust part such as a vacuum pump, etc.On the other hand, the internal pressure of the aerosol supplier is setto be greater than the internal pressure of the chamber. The internalpressure of the aerosol supplier is, for example, several hundred toseveral tens of thousand Pa. The powder body supplier may be atatmospheric pressure. The fine particles in the aerosol is acceleratedby the pressure difference between the chamber and the aerosol supplier,etc., so that the jet velocity of the raw material particles from thenozzle is in the range of subsonic speed to supersonic speed (50 to 500m/s). The jet velocity is controlled by the gas type and the flowvelocity of the gas supplied from the gas supplier, the shape of thenozzle, the length and/or the inner diameter of the pipe, the exhaustrate of the exhaust part, etc. For example, a supersonic nozzle such asa Laval nozzle, etc., also can be used as the nozzle. The fine particlesin the aerosol are sprayed at a high speed from the nozzle, collide withthe base material 10, are pulverized or deformed, and are deposited onthe base material 10 as a structural component (the ceramic layer 20).By changing the relative positions of the base material 10 and thenozzle, a composite structure (the semiconductor manufacturing apparatusmember 120) that includes the structural component (the ceramic layer20) having a prescribed surface area on the base material 10 is formed.

A pulverizer for pulverizing the agglomerate of fine particles beforebeing sprayed from the nozzle may be included. Any method can beselected as the pulverizing method of the pulverizer. For example, knownmethods include mechanical pulverization such as vibrating, colliding,or the like, static electricity, plasma irradiation, classification,etc.

Second Embodiment

FIGS. 5A and 5B are cross-sectional views illustrating portions ofsemiconductor manufacturing apparatus members according to a secondembodiment.

A description similar to that of the semiconductor manufacturingapparatus member 120 is applicable to a semiconductor manufacturingapparatus member 120 d illustrated in FIG. 5A. However, the arithmeticalmean height Sa of the surface of the first part 21 may not be less thanthe arithmetical mean height Sa of the surface of the second part 22, ormay be similar to that of the semiconductor manufacturing apparatusmember 120. Also, the arithmetical mean height Sa of the third hole part13 c may not be greater than the arithmetical mean heights Sa of thesurfaces of the first and second parts 21 and 22, or may be similar tothat of the semiconductor manufacturing apparatus member 120.

As illustrated in FIG. 5A, the semiconductor manufacturing apparatusmember 120 d includes a composite structure 30. The composite structurerefers to a component that includes a base material and a structuralcomponent (e.g., a layer or a film) located on the base materialsurface. The composite structure 30 includes the base material 10 andthe ceramic layer 20. In the example, the composite structure 30 is astacked body of the base material 10 and the ceramic layer 20. Accordingto the embodiment, the base material 10 and the ceramic layer 20 eachmay include a stacked structure that includes multiple layers.

As illustrated in FIG. 5A, the composite structure 30 includes a firstmajor surface 311, and a second major surface 312 at the side oppositeto the first major surface 311. For example, the first major surface 311is the surface 21 s of the first part of the ceramic layer 20; and thesecond major surface 312 is the second surface 12 of the base material10. Also, at least one through-hole 313 is provided in the compositestructure 30. The through-hole 313 extends in the Z-direction andextends through the base material 10 and the ceramic layer 20. Forexample, one through-hole 313 is located at the center of the compositestructure 30. However, the through-hole 313 may not be at the center ofthe composite structure 30; and multiple through-holes 313 may beprovided.

The through-hole 313 is, for example, circular when viewed along theZ-direction. The through-hole 313 (an inner perimeter surface 313 s ofthe through-hole) includes the first hole region 313 a, a second holeregion 313 b, and the third hole region 313 c. The first hole region 313a, the second hole region 313 b, and the third hole region 313 c eachare exposed and contact the plasma. The inner perimeter surface 313 s isthe inner perimeter surface of the composite structure 30 that definesthe through-hole 313. The inner perimeter surface 313 s faces theinterior of the through-hole 313 and crosses the X-Y plane.

The first hole region 313 a is a region of the inner perimeter surface313 s positioned at the vicinity of the first major surface 311 and nextto the first major surface 311. The first hole region 313 a iscontinuous with the first major surface 311. The first hole region 313 ais positioned between the first major surface 311 and the second majorsurface 312 in the Z-direction. The first hole region 313 a is anoblique surface that is not parallel to the first major surface 311 andcrosses the first major surface 311 and the Z-direction. The first holeregion 313 a may be a surface that extends parallel to the Z-direction.In the cross section parallel to the Z-direction, the first hole region313 a may have a straight-line shape or may be curved. For example, thefirst hole region 313 a has a ring shape surrounded with the first majorsurface 311 when viewed along the Z-direction (i.e., when projected ontothe X-Y plane).

The second hole region 313 b is positioned between the first hole region313 a and the second major surface 312 in the Z-direction. In otherwords, the Z-direction position of the second hole region 313 b isbetween the Z-direction position of the first hole region 313 a and theZ-direction position of the second major surface 312. For example, thesecond hole region 313 b is a region of the inner perimeter surface 313s that is positioned at the vicinity of the second major surface 312 andis next to the second major surface 312. The second hole region 313 bmay be continuous with the second major surface 312. The second holeregion 313 b extends in the Z-direction and is, for example, parallel tothe Z-direction. The second hole region 313 b is, for example, aperpendicular surface that is substantially perpendicular to the secondmajor surface 312. When viewed along the Z-direction, for example, thesecond hole region 313 b has a ring shape inside the first hole region313 a.

The third hole region 313 c is positioned between the first hole region313 a and the second hole region 313 b in the Z-direction. In otherwords, the Z-direction position of the third hole region 313 c isbetween the Z-direction position of the first hole region 313 a and theZ-direction position of the second hole region 313 b. The third holeregion 313 c is a region of the inner perimeter surface 313 s that iscontinuous with the first hole region 313 a. The third hole region 313 cis an oblique surface that is not parallel to the first surface 11 andcrosses the first surface 11 and the Z-direction. The third hole region313 c may be a surface that extends in the Z-direction. In the crosssection parallel to the Z-direction, the third hole region 313 c mayhave a straight-line shape or may be curved. When viewed along theZ-direction, for example, the third hole region 313 c has a ring shapethat is surrounded with the first hole region 313 a and contacts thefirst hole region 313 a; and the second hole region 313 b is positionedinside the third hole region 313 c. The third hole region 313 c and thesecond hole region 313 b may be continuous.

In the example of FIG. 5A, the first hole region 313 a of thethrough-hole 313 is the surface 22 s of the second part 22 of theceramic layer 20; the second hole region 313 b is the second hole part13 b of the hole 13 of the base material 10; and the third hole region313 c is the third hole part 13 c of the hole 13 of the base material10. A portion of the through-hole 313 of the composite structure 30 isat least a portion of the hole 13 of the base material 10. Specifically,a portion of the through-hole 313 is defined by the second and thirdhole parts 13 b and 13 c that define a portion of the hole 13 of thebase material 10.

The hardness of the third hole region 313 c is greater than the hardnessof the first hole region 313 a. For example, the third hole region 313 cwears less easily than the first hole region 313 a. In the example ofFIG. 5A, the hardness of the third hole part 13 c of the base material10 is greater than the hardness of the surface 22 s of the ceramic layer20. For example, the hardness of the material of the base material 10 isgreater than the hardness of the material of the ceramic layer 20.Thereby, the hardness of the third hole region 313 c can be set to begreater than the hardness of the first hole region 313 a. Specifically,the materials of the first and second parts 21 and 22 of the ceramiclayer 20 can include at least one of an oxide of a rare-earth element, afluoride of a rare-earth element, or an acid fluoride of a rare-earthelement. The rare-earth element is at least one selected from the groupconsisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er,Tm, and Lu. The material of the base material 10 can include at leastone of aluminum oxide (Al₂O₃), zirconium oxide (ZrO₂), or aluminumnitride (AlN).

The third hole region 313 c is positioned further inward of thethrough-hole 313 than the first hole region 313 a. For example, whenhandling the semiconductor manufacturing apparatus member, when a jigsuch as a positioning pin or the like is inserted into the through-hole313, the likelihood of the third hole region 313 c physically contactingthe jig is greater than the likelihood of the first hole region 313 aphysically contacting the jig. For example, during maintenance of thesemiconductor manufacturing apparatus member, when the first hole region313 a and the third hole region 313 c contact a cleaning pad, there is arisk that the third hole region 313 c may wear more easily than thefirst hole region 313 a if the angle θβ is less than the angle θα. Forexample, when the angle θβ is less than the angle θα, there is a riskthat the force may concentrate more easily and wear may occur moreeasily at the vicinity of the corner at the boundary between the thirdhole region 313 c and the second hole region 313 b than at the vicinityof the corner at the boundary between the first hole region 313 a andthe first major surface 311.

Conversely, according to the embodiment, because the hardness of thethird hole region 313 c is relatively high, damage of the third holeregion 313 c due to physical contact in the maintenance or handling ofthe semiconductor manufacturing apparatus member can be suppressed. Theproduction of particles can be suppressed thereby.

A semiconductor manufacturing apparatus member 120 e illustrated in FIG.5B differs from the semiconductor manufacturing apparatus member 120 din that the ceramic layer 20 includes the third part 23. In thesemiconductor manufacturing apparatus member 120 e, the third holeregion 313 c is a surface 23 s of the third part 23. Otherwise, adescription similar to that of the semiconductor manufacturing apparatusmember 120 d is applicable to the semiconductor manufacturing apparatusmember 120 e.

The third part 23 of the ceramic layer 20 is located on the third holepart 13 c and contacts the third hole part 13 c. The third part 23 iscontinuous with the second part 22. The surface 23 s of the third part23 directly contacts the plasma. That is, the surface 23 s is at theside opposite to the surface of the third part 23 contacting the thirdhole part 13 c and is exposed inside the chamber 110. In the example,the first hole part 13 a and the third hole part 13 c are covered withthe ceramic layer 20 and do not directly contact the plasma. Theproduction of particles from the first and third hole parts 13 a and 13c of the hole 13 of the base material can be suppressed thereby. On theother hand, when the ceramic layer 20 is not located at the third holepart 13 c as in the example of FIG. 5A, the formation of the ceramiclayer 20 having degraded characteristics at the third hole part 13 c canbe suppressed, and the production of particles from the ceramic layer 20can be further suppressed.

In the example of FIG. 5B, the first hole region 313 a of thethrough-hole 313 is the surface 22 s of the second part 22 of theceramic layer 20; the second hole region 313 b is the second hole part13 b of the hole 13 of the base material 10; and the third hole region313 c is the surface 23 s of the third part 23 of the ceramic layer 20.In the example as well, a portion of the through-hole 313 of thecomposite structure 30 is at least a portion of the hole 13 of the basematerial 10. Specifically, a portion of the through-hole 313 is definedby the second hole part 13 b that defines a portion of the hole 13 ofthe base material 10.

In the semiconductor manufacturing apparatus member 120 e as well, thehardness of the third hole region 313 c is greater than the hardness ofthe first hole region 313 a. In other words, the hardness of the surface23 s of the third part 23 of the ceramic layer 20 is greater than thehardness of the surface 22 s of the second part 22 of the ceramic layer20. Damage of the third hole region 313 c due to physical contact in themaintenance or handling of the semiconductor manufacturing apparatusmember can be suppressed thereby. The production of particles can besuppressed thereby.

For example, the material of the third part 23 is different from thematerial of the second part 22; and the hardness of the material of thethird part 23 is greater than the hardness of the material of the secondpart 22. Thereby, the hardness of the third hole region 313 c can be setto be greater than the hardness of the first hole region 313 a. Forexample, the material of the third part 23 can include at least one ofan oxide of a rare-earth element, a fluoride of a rare-earth element, oran acid fluoride of a rare-earth element. The rare-earth element is atleast one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu,La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. The hardness of thethird part 23 and the hardness of the second part 22 can be set to bedifferent by setting the composition of the third part 23 and thecomposition of the second part 22 to be different.

The film that is used to form the second part 22 and the film that isused to form the third part 23 each can be provided in the desired areasby using masking such as tape, etc. For example, the film that is usedto form the third part 23 is formed on the third hole part 13 c in astate in which a mask is provided on the first hole part 13 a or thesecond part 22. For example, the film that is used to form the secondpart 22 is formed on the first hole part 13 a in a state in which a maskis provided on the third hole part 13 c or the third part 23. Thereby,separate films can be formed on the first and third hole parts 13 a and13 c; and the material of the third part 23 and the material of thesecond part 22 can be different. Thereby, the hardness of the third part23 and the hardness of the second part 22 can be different. Separatefilms may be provided on the first and third hole parts 13 a and 13 c byremoving a portion of the film after film formation by polishing, etc.,without using masking.

For example, the density of the third part 23 is greater than thedensity of the second part 22. Thereby, the hardness of the third holeregion 313 c can be set to be greater than the hardness of the firsthole region 313 a. For example, the second part 22 and the third part 23can be formed by forming one film as the second and third parts 22 and23 and by subsequently performing surface modification treatment of aportion of the film. Examples of the surface modification treatmentinclude a method of forming a melt-solidification film by applyingenergy to melt a prescribed depth range from the surface of the film andby subsequently cooling the depth range. Compared to regions on whichthe surface modification treatment is not performed, themelt-solidification film that is formed by the surface modificationtreatment is a dense film having a planarized surface and few pores. Amethod that can selectively perform thermofusion of the surface may beused as the surface modification treatment. Specifically, laserannealing treatment or plasma jet treatment are examples of surfacemodification treatment. For example, the area on which the surfacemodification treatment is performed becomes the third part 23, and thearea on which the surface modification treatment is not performedbecomes the second part 22.

The film formation conditions of the third part 23 and the filmformation conditions of the second part 22 may be different. Thereby,the density of the third part 23 and the density of the second part 22can be different, or the hardness of the third part 23 and the hardnessof the second part 22 can be different. When using aerosol deposition,the flow rate or flow velocity of the gas supplied from the gassupplier, the gas type, etc., are examples of the film formationconditions. The film formation condition may be the angle at which theaerosol sprayed from the nozzle collides with the base material.

According to the embodiment, the ceramic layer 20 may not always belocated on the first and third hole parts 13 a and 13 c. The first holeregion 313 a may be the surface of the base material 10. The hardness ofa portion of the base material surface may be adjusted as appropriate bysurface treatment (e.g., a coating or modification treatment), etc.

FIGS. 6A and 6B are cross-sectional views illustrating portions ofsemiconductor manufacturing apparatus members. FIGS. 6A and 6B eachillustrate the base material 10 of the semiconductor manufacturingapparatus member. The configuration of the base material 10 shown inFIG. 6A is similar to the base material 10 described above in referenceto FIG. 2. The angle θα of the base material 10 of FIG. 6A is 150°.

The angle θα of the base material 10 shown in FIG. 6B is 120°. The shape(the length and the angle) of the oblique surface 13 ac and the lengthof the second hole part 13 b in the base material 10 of FIG. 6B aredifferent from those of the base material 10 of FIG. 6A. Otherwise, theconfiguration of the base material 10 of FIG. 6B is similar to that ofthe base material 10 of FIG. 6A.

In the base material 10 illustrated in FIG. 6A, the angle θα is greaterthan the angle θβ. In the base material 10 illustrated in FIG. 6B, theangle θα is less than the angle θβ. The length Ln in the Z-direction ofthe second hole part 13 b of the base material 10 of FIG. 6A is greaterthan the length Ln in the Z-direction of the second hole part 13 b ofthe base material 10 of FIG. 6B. Thus, when the thickness of the basematerial 10 is constant, the length in the Z-direction of the secondhole part 13 b is easily increased when the angle θα is greater than theangle θβ.

Proximity circles PC are shown in FIGS. 6A and 6B. The proximity circlesPC are proximate to the edge part (the boundary 14) formed of the firstsurface 11 and the oblique surface 13 ac. In a cross section parallel tothe Z-direction such as those of FIGS. 6A and 6B, the proximity circlePC is a circle that contacts the first surface 11 and the obliquesurface 13 ac. A distance (a distance t2) between the X-directionposition of the center p of the proximity circle PC and the X-directionposition of the boundary 14 in FIG. 6A and the distance (the distancet2) between the X-direction position of the center p of the proximitycircle PC and the X-direction position of the boundary 14 in FIG. 6Bmatch. That is, in FIGS. 6A and 6B, the X-direction positions of thecenters p match when the X-direction positions of the boundaries 14match. In such a case, a width t of the incline is constant in FIGS. 6Aand 6B. In other words, the width t of FIG. 6A and the width t of FIG.6B are equal to each other. When a radius R of the proximity circle PCshown in FIG. 6A is taken to be r, the radius R of the proximity circlePC shown in FIG. 6B is 0.47 r.

Here, the width t of the incline is the sum of the distance t2 and aprescribed distance t1. The prescribed distance t1 in FIG. 6A is thedistance in the X-direction from the boundary 14 to the second hole part13 b. The prescribed distance t1 is constant. In other words, theprescribed distance t1 of FIG. 6A and the prescribed distance t1 of FIG.6B are equal to each other. The width t of the incline is the distancealong the X-direction between the center p of the proximity circle PCand the second hole part 13 b of FIG. 6A.

FIG. 7 is a graph illustrating stress of the semiconductor manufacturingapparatus member.

FIG. 7 illustrates a calculation result of the relationship between theradius R of the proximity circle PC and stress S generated in thesemiconductor manufacturing apparatus member. Namely, FIG. 7 shows thechange of the stress S of a semiconductor manufacturing apparatus membersimilar to that of FIG. 2 when the radius R of the proximity circle PCof the base material 10 is changed similarly to FIGS. 6A and 6B. Morespecifically, in the base material 10, the distance t2 (the distancebetween the X-direction position of the center p of the proximity circlePC and the X-direction position of the boundary 14) and the thickness ofthe base material 10 are kept constant, and the angle θα is changed. Thestress S that is generated in the ceramic layer 20 formed on theboundary 14 when changing the radius R, the length in the Z-direction ofthe second hole part 13 b, and the shape (the length and the angle) ofthe oblique surface 13 ac are calculated thereby. The angle θα is takento be greater than 90° which corresponds to radius R>0.27 r.

The stress S is the calculation result of the stress (e.g., the residualstress) generated in the connection part between the first part 21 andthe second part 22 (i.e., the ceramic layer 20 formed on the boundary14). For example, the magnitude of the stress S corresponds to theelectric field intensity at the surface of the ceramic layer 20 on theboundary 14.

The radius R of the proximity circle PC increases as the angle θαincreases. As illustrated in FIG. 7, the stress S decreases as theradius R increases. For example, the radius R when the angle θα is 150°as in FIG. 6A is taken as r; and the corresponding stress S is taken asabout s. When the angle θα is 120° as in FIG. 6B, the radius R is 0.47r, and the corresponding stress S is calculated to be about 1.7 s. Inother words, compared to the example of FIG. 6B, the stressconcentration can be suppressed and the stress can be reduced by about1.7 times in the example of FIG. 6A. That is, the stress concentrationcan be relaxed by increasing the angle θα. The angle θα is, for example,not less than 150°, and more favorably not less than 160°.

For example, the oblique surface 13 ac is taken to have a straight-lineshape in the cross section parallel to the Z-direction. When the obliquesurface 13 ac is curved in the cross section parallel to theZ-direction, there are cases where the electric field concentrates inthe oblique surface 13 ac or the ceramic layer 20 on the oblique surface13 ac, and particles are produced. Conversely, when the oblique surface13 ac has a straight-line shape in the cross section parallel to theZ-direction, the electric field concentration at the oblique surface 13ac or the ceramic layer 20 on the oblique surface 13 ac can be morerelaxed.

For example, when the radius R is 0.3 r, the stress S is about 2.5 s;and when the radius R is 0.7 r, the stress S is about 1.2 s.

FIG. 8 is a table illustrating an evaluation of the particle resistanceof the semiconductor manufacturing apparatus member. Samples 1 to 5 eachwere similar to the semiconductor manufacturing apparatus member 120described with reference to FIG. 2. As illustrated in FIG. 8, at leastone of the arithmetical mean height Sa of the first part 21, thearithmetical mean height Sa of the second part 22, or the arithmeticalmean height Sa of the third hole part 13 c was changed between thesamples 1 to 5. The features other than the arithmetical mean height Sa(e.g., the angle θα, the angle θβ, the thickness of the base material10, etc.) were constant in the samples 1 to 5.

In the sample 1, the arithmetical mean height Sa of the first part 21was 0.03 μm, the arithmetical mean height Sa of the second part 22 was0.06 μm, and the arithmetical mean height Sa of the third hole part 13 cwas 0.2 μm.

In the sample 2, the arithmetical mean height Sa of the first part 21was 0.03 μm, the arithmetical mean height Sa of the second part 22 was0.12 μm, and the arithmetical mean height Sa of the third hole part 13 cwas 0.5 μm.

In the sample 3, the arithmetical mean height Sa of the first part 21was 0.06 μm, the arithmetical mean height Sa of the second part 22 was0.35 μm, and the arithmetical mean height Sa of the third hole part 13 cwas 0.3 μm.

In the sample 4, the arithmetical mean height Sa of the first part 21was 0.08 μm, the arithmetical mean height Sa of the second part 22 was0.81 μm, and the arithmetical mean height Sa of the third hole part 13 cwas 0.85 μm.

In the sample 5, the arithmetical mean height Sa of the first part 21was 0.15 μm, the arithmetical mean height Sa of the second part 22 was0.41 μm, and the arithmetical mean height Sa of the third hole part 13 cwas 0.2 μm.

FIG. 8 also shows a ratio R21 and a ratio R31 for each sample. The ratioR21 is the ratio of the arithmetical mean height Sa of the second part22 to the arithmetical mean height Sa of the first part 21. The ratioR31 is the ratio of the arithmetical mean height Sa of the third holepart 13 c to the arithmetical mean height Sa of the first part 21.

FIG. 8 illustrates the particle resistance of each sample as “⊚”, “◯”,or “x”. The particle resistance was evaluated by irradiating plasma onthe samples and by evaluating the difference between the arithmeticalmean height Sa before plasma irradiation and the arithmetical meanheight Sa after plasma irradiation. The conditions of the plasmairradiation were as follows. An inductively coupled plasma reactive ionetching apparatus (Muc-21Rv-Aps-Se/Sumitomo Precision Products Co.,Ltd.) was used as the plasma etching apparatus. The conditions of theplasma etching were ICP (Inductively Coupled Plasma) having an output of1500 W and a bias output of 750 W as the power supply output, a gasmixture of 100 ccm of CH F₃ gas and 10 ccm of O₂ gas as the process gas,a pressure of 0.5 Pa, and a plasma etching time of 1 hour.

“⊚” indicates that the change of the arithmetical mean height Sa due tothe plasma irradiation was small for all of the first part 21, thesecond part 22, and the third hole part 13 c. “◯” indicates that thechange of the arithmetical mean height Sa due to the plasma irradiationwas small for at least two among the first part 21, the second part 22,or the third hole part 13 c. “x” indicates a particle resistance otherthan “⊚” and “◯”.

As described above, for example, the arithmetical mean height Sa of thesurface 22 s of the second part 22 is not less than 2 times and not morethan 10 times the arithmetical mean height Sa of the surface 21 s of thefirst part 21, and more favorably not more than 5 times. In other words,the ratio R21 is not less than 2.0 and not more than 10, and morefavorably not more than 5.0. As illustrated in FIG. 8, the particleresistance of the sample 3 in which the ratio R21 was 5.8 was greaterthan the particle resistance of the sample 4 in which the ratio R21 was10.1. The particle resistances of the sample 1 in which the ratio R21was 2.0 and the sample 2 in which the ratio R21 was 4.0 were greaterthan the particle resistance of the sample 3.

Also, as described above, for example, the arithmetical mean height Saof the third hole part 13 c is greater than 2 times the arithmeticalmean height Sa of the surface 21 s of the first part 21. In other words,the ratio R31 is greater than 2.0. As illustrated in FIG. 8, theparticle resistances of the sample 1 in which the ratio R31 was 6.7, thesample 2 in which the ratio R31 was 16.7, and the sample 3 in which theratio R31 was 5.0 were greater than the particle resistance of thesample 5 in which the ratio R31 was 1.3.

The cross sections of the semiconductor manufacturing apparatus memberdescribed with reference to FIGS. 2 to 6B may be cross sections thatpass through the center of the hole 13 in the X-Y plane.

In this specification, “perpendicular” and “parallel” include not onlystrictly perpendicular and strictly parallel but also, for example, thefluctuation due to manufacturing processes, etc.; and it is sufficientto be substantially perpendicular and substantially parallel.

Hereinabove, embodiments of the invention are described. However, theinvention is not limited to these descriptions. Appropriate designmodifications made by one skilled in the art for the embodimentsdescribed above also are within the scope of the invention to the extentthat the features of the invention are included. For example, theconfigurations, the dimensions, the materials, the arrangements, themounting forms, etc., of the components included in the semiconductormanufacturing apparatus member and the semiconductor manufacturingapparatus are not limited to those illustrated and can be modifiedappropriately. The components included in the embodiments describedabove can be combined within the limits of technical feasibility; andsuch combinations also are within the scope of the invention to theextent that the features of the invention are included.

What is claimed is:
 1. A semiconductor manufacturing apparatus memberused inside a chamber of a semiconductor manufacturing apparatus, themember comprising: a base material including a first surface, a secondsurface at a side opposite to the first surface, and at least one holeextending through the first and second surfaces; and a ceramic layerlocated on the base material, the at least one hole including a firsthole part continuous with the first surface, the ceramic layer includinga first part located on the first surface, the first part being exposed,and a second part located on the first hole part, an arithmetical meanheight Sa of a surface of the first part being less than an arithmeticalmean height Sa of a surface of the second part.
 2. The member accordingto claim 1, wherein the at least one hole further includes: a secondhole part positioned between the second surface and the first hole partin a first direction, the first direction being from the first surfacetoward the second surface; and a third hole part positioned between thefirst hole part and the second hole part in the first direction, thethird hole part being continuous with the first hole part and beingexposed, and an arithmetical mean height Sa of the third hole part isgreater than the arithmetical mean height Sa of the surface of the firstpart and greater than the arithmetical mean height Sa of the surface ofthe second part.
 3. The member according to claim 1, wherein thearithmetical mean height Sa of the surface of the second part is notmore than 10 times the arithmetical mean height Sa of the surface of thefirst part.
 4. The member according to claim 2, wherein the arithmeticalmean height Sa of the third hole part is greater than 2 times thearithmetical mean height Sa of the surface of the first part.
 5. Themember according to claim 1, wherein the arithmetical mean height Sa ofthe surface of the second part is less than 0.5 micrometers.
 6. Themember according to claim 1, wherein the arithmetical mean height Sa ofthe surface of the first part is less than 0.1 micrometers.
 7. Themember according to claim 1, wherein the at least one hole furtherincludes: a second hole part positioned between the second surface andthe first hole part in a first direction, the first direction being fromthe first surface toward the second surface; and a third hole partpositioned between the first hole part and the second hole part in thefirst direction, the third hole part being continuous with the firsthole part and being exposed, and an arithmetical mean height Sa of thethird hole part is greater than the arithmetical mean height Sa of thesurface of the first part and less than the arithmetical mean height Saof the surface of the second part.
 8. The member according to claim 1,wherein the ceramic layer includes a polycrystalline ceramic.
 9. Themember according to claim 8, wherein an average crystallite size of thepolycrystalline ceramic calculated using a TEM image having amagnification of 400,000 times to 2,000,000 times is not less than 3nanometers and not more than 50 nanometers.
 10. The member according toclaim 1, wherein the ceramic layer includes at least one selected fromthe group consisting of an oxide of a rare-earth element, a fluoride ofa rare-earth element, and an acid fluoride of a rare-earth element. 11.The member according to claim 10, wherein the rare-earth element is atleast one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu,La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.
 12. The member accordingto claim 1, wherein the base material includes a ceramic.
 13. The memberaccording to claim 12, wherein the base material includes alumina.
 14. Asemiconductor manufacturing apparatus, comprising: a chamber; and thesemiconductor manufacturing apparatus member according to claim 1, thechamber including an interior wall, the interior wall defining a spacein which plasma is generated, the ceramic layer of the semiconductormanufacturing apparatus member being included in at least a portion ofthe interior wall.